1.0um 800V process platform integrated LVCMOS, MV CMOS, HV DMOS and other option device such as High resistance POLY resistor and Zener Diodes. It is a good choice for customer to design off-line AC/DC power source and LED driver.
Process features：
? Integrated 800V power VDMOS device, BV higher than 900V.
? VLD (Varied Lateral Doping) for termination can shrink 1/3 chip area.
? Thick and high resistivity epitaxial layer used as starting material.
? Twin well, single poly, single metal, backside grinding and backside metal.
? 11 masks and 12 photo layers.
? LV/MV/HV NMOS integrated, including asymmetrical and symmetrical structure, enhanced and depletion type.
? Gate oxide capacitor, zener diode, low poly resistor integrated.
? Isolation between high voltage and low voltage devices are reliable.
1) Application
? Power management
? Display driver
? Automobile electronics